inchange semiconductor isc product specification isc silicon npn power transistor BU2532AL description collector-emitter sustaining voltage- : v ceo(sus) = 800v (min) high switching speed applications designed for use in horizontal deflection circuits of high resolution monitors. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector- emitter voltage(v be = 0) 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7.5 v i c collector current- continuous 16 a i cm collector current-peak 40 a i b b base current- continuous 10 a i bm base current-peak 15 a p c collector power dissipation @ t c =25 125 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU2532AL electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 800 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 7.5 v v ce (sat) collector-emitter saturation voltage i c = 7a; i b = 1.17a b 5.0 v v be (sat) base-emitter saturation voltage i c = 7a; i b = 1.17a b 1.0 v i ces collector cutoff current v ce = 1500v; v be = 0 v ce = 1500v; v be = 0; t c =125 1.0 2.0 ma i ebo emitter cutoff current v eb = 7.5v; i c = 0 1.0 ma h fe-1 dc current gain i c = 1a; v ce = 5v 17 h fe-2 dc current gain i c = 7a; v ce = 5v 6 12.5 switching times t stg storage time 1.8 s t f fall time i c = 7a , i b( end ) = 1a; l c = 100 h; v cc = 138v; c fb = 3nf 0.1 s isc website www.iscsemi.cn 2
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